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S9013NPN Epitaxial Silicon TransistorTO-924.550.2 3.50.2 FEATURE Power dissipation PCM : 0.625 W Tamb=25 C Collector currentCM: 0.5 A I0.43+0.080.07 Collector-base voltage46+0.10. 0.1 V(BR)CBO : 40 V (1.27 Typ.) Operating and storage junction temperature range 1: Emitter+0.21.250.22: Base1 2 3stg:Tj, T -55 to +150 C3: Collector2.540.1 ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100 A IE=0 40 VCollector-emitter breakdown voltage V(BR)CEO IC= 1 mA , IB=0 25 VEmitter-base breakdown voltage V(BR)EBO IE= 100 A IC=0 5 VCollector cut-off current ICBO VCB= 40V , IE=0 0.1 ACollector cut-off current ICEO VCE=20V , IE=0 0.1 AEmitter cut-off current IEBO VEB= 5V, IC=0 0.1 AhFE(1) VCE=1V, IC=50