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S9013 Transistor(NPN)TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Complementary to S9012 Excellent hFE linearity MAXIMUM RATINGS TA=25 unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO 5 VEmitter-Base Voltage IC Collector Current -Continuous 500 mA Dimensions in inches and (millimeters)PC Collector Dissipation 625 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNITCollector-base breakdown voltage V(BR)CBO IC= 100A , IE=0 40 VCollector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 25 VEmitter-base breakdown voltage V(BR)EBO IE= 100A , IC=0 5 VA Collector cut-off current ICBO VCB= 40V , IE=0 0.1A Col