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S9013TRANSISTOR (NPN) FEATURES Complementary to S90121. EMITTER Excellent hFE linearity2. BASE3. COLLECTOREquivalent Circuit Collector-Base Voltage 40 V Collector-Emitter Voltage 25 V Emitter-Base Voltage 5 V Collector Current -Continuous 0.5 A Collector Power Dissipation 625 mW Thermal Resistance rom Junction o Ambient /W 200 TJ, Operation Junction and Storage Temperature Range -55 www.slkormicro.com 1S9013T =25 unless otherwise specified a Symbol Test conditions Min Typ Max Unit V(BR)CBO IC= 100A , IE=0 40 V V(BR)CEO IC= 1mA , IB=0 25 V

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 s9013d s9013e s9013f s9013g s9013h s9013i s9013j.pdf Проектирование, MOSFET, Мощность

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 s9013d s9013e s9013f s9013g s9013h s9013i s9013j.pdf База данных, Инновации, ИМС, Транзисторы