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SiHB10N40Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 450- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.6- Low Input Capacitance (Ciss)Qg max. (nC) 30- Reduced Capacitive Switching LossesQgs (nC) 4- High Body Diode RuggednessQgd (nC) 7- Avalanche Energy Rated (UIS)Configuration Single Optimal Efficiency and Operation- Low CostDD2PAK (TO-263)- Simple Gate Drive Circuitry- Low Figure-of-Merit (FOM): Ron x Qg - Fast Switching Material categorization: For definitions of complianceGplease see www.vishay.com/doc?99912 DAPPLICATIONSG Consumer ElectronicsSS- Displays (LCD or Plasma TV)N-Channel MOSFET Server and Telecom Power Supplies- SMPS Industrial- Welding- Induction Heating- Motor Drives Batte