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SiHF10N40Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 450- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.6- Low Input Capacitance (Ciss)Qg max. (nC) 30- Reduced Capacitive Switching LossesQgs (nC) 4 - High Body Diode Ruggedness- Avalanche Energy Rated (UIS)Qgd (nC) 7 Optimal Efficiency and OperationConfiguration Single- Low CostD- Simple Gate Drive CircuitryTO-220 FULLPAK- Low Figure-of-Merit (FOM): Ron x Qg- Fast Switching Compliant to RoHS Directive 2011/65/EUNoteG* Pb containing terminations are not RoHS compliant, exemptionsmay applyAPPLICATIONSSS Consumer ElectronicsDGN-Channel MOSFET - Displays (LCD or Plasma TV) Server and Telecom Power Supplies- SMPS Industrial- Welding- Induction Heating