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SiHG28N60EFwww.vishay.comVishay SiliconixEF Series Power MOSFET with Fast Body DiodeFEATURESPRODUCT SUMMARY Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology Reduced trr, Qrr, and IRRMRDS(on) max. at 25 C () VGS = 10 V 0.123 Low figure-of-merit (FOM): Ron x QgQg (Max.) (nC) 120 Low input capacitance (Ciss)Qgs (nC) 17 Low switching losses due to reduced QrrQgd (nC) 33 Ultra low gate charge (Qg)Configuration Single Avalanche energy rated (UIS) Material categorization: for definitions of compliance Dplease see www.vishay.com/doc?99912 TO-247ACAPPLICATIONS Telecommunications- Server and telecom power suppliesG Lighting- High intensity discharge (HID)S- Light emitting diodes (LEDs)D Consumer and computingSG- ATX power suppliesN-Channel MOSFET Industrial