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SiHP10N40Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 450- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.6- Low Input Capacitance (Ciss)Qg max. (nC) 30- Reduced Capacitive Switching LossesQgs (nC) 4- High Body Diode RuggednessQgd (nC) 7- Avalanche Energy Rated (UIS)Configuration Single Optimal Efficiency and Operation- Low CostD- Simple Gate Drive CircuitryTO-220AB- Low Figure-of-Merit (FOM): Ron x Qg- Fast Switching Material categorization: For definitions of complianceGplease see www.vishay.com/doc?99912 NoteS* Lead (Pb)-containing terminations are not RoHS-compliant.DExemptions may apply.GSAPPLICATIONSN-Channel MOSFET Consumer Electronics- Displays (LCD or Plasma TV) Server and Telecom Power Supplies