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SL40T65FL650V 40A IGBTFeatures High Speed Switching & Low Power Loss VCE(sat) = 1.95V @ IC = 40A E = 0.35mJ @ T = 25C off C High Input Impedance t = 80ns (typ.) @di /dt = 1000A/ s rr F Maximum junction temperature 175C Applications PFC Welder UPS IH Cooker PV Inverter TO-247Maximum Rating Parameter Symbol Rating Unit Collector-emitter voltage V 650 V CE T =25C 80 A C DC collector current, limited by Tvjmax IC T =100C 40 A C Pulsed collector current, t limited by T I 160 A p jvjmax Cpuls Turn off safe operating area V 600V, T 175C - 160 A CE vj T =25C 40 C Diode forward current limited by T I A vjmax F T =100C 20 C Diode pulsed current, t limited by T I 160 A p vjmax FpulsGate-emitter voltage V 20 V GE T =25C 375 W C Power dissipatio

 

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 sl40t65fl.pdf Проектирование, MOSFET, Мощность

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