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SMBT3906UPNP Silicon Switching Transistor Array4 High DC current gain: 0.1mA to 100mA56 Low collector-emitter saturation voltage Two ( galvanic) internal isolated Transistors with good matching in one package32 Complementary type: SMBT3904U (NPN)1C1 B2 E2 VPW091976 5 4TR2TR11 2 3E1 B1 C2EHA07175Type Marking Pin Configuration PackageSMBT3906U s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1SC74Maximum RatingsParameter Symbol Value UnitCollector-emitter voltage 40 VVCEOCollector-base voltage 40VCBOEmitter-base voltage 5VEBODC collector current 200 mAIC330 mWTotal power dissipation, TS = 105 C PtotJunction temperature 150 CTjStorage temperature -65 ... 150TstgThermal ResistanceJunction - soldering point1) RthJS 135 K/W1For calculation of RthJA please refer to Application Note Thermal Resistance1 Nov-30-2001SMBT39