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SMF10N65650V N-Channnel MOSFETFeatures 10.0A, 650V, R =0.80@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche Tested Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionAbsolute Maximum Ratings(Tc=25C unless otherwise noted)Symbol Parameter Value UnitV Drain-Source Voltage 650 VDSS10.0* ADrain Current - Continuous(Tc=25C)ID- Continuous(Tc=100C)6.0* AI Drain Current -Pulsed (Note1) 40* ADMV Gate-Source Voltage 30 VGSSE Single Pulsed Avalanche Energy (Note2) 713 mJASI Avalanche Current (Note1) 10.0 AARE Repetitive Avalanche Energy (Note1) 17.8 mJARdv/dt Peak Diode Recovery dv/dt (Note3) 4.5 V/ns50 WPower Dissipation(T =25C)CPD-Derate above 25C0.4 W/CTj Operating Junc