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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SS8050LT1 TRANSISTOR (NPN) SOT-23 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM: 0.3 W ( Tamb=25) 1. 3 Collector current ICM: 1.5 A Collector-base voltage V(BR)CBO: 25 V Operating and storage junction temperature range Unit: mm TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V 25 V(BR)CBO Ic= 100A, I =0ECollector-emitter breakdown voltage V Ic= 0.1mA, I =0 20 V(BR)CEO BEmitter-base breakdown voltage V 5 V(BR)EBO I =100A, I =0 E CCollector cut-off current ICBO VCB=25V, IE=0 0.1A Collector cut-off current I V=0 0.1CEO CE=20V, IE A Emitter cut-off current I V =