Скачать даташит для ss8550-l_ss8550-h_ss8550-j:

SS8 550 TRANSISTOR(PNP)FEATURES SOT23 High Collector Current Complementary to SS8050 MARKING: Y2MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -40 V CBO3. COLLECTOR V Collector-Emitter Voltage -25 V CEOV Emitter-Base Voltage -5 V EBOIC Collector Current -1.5 A P Collector Power Dissipation 300 mW CR Thermal Resistance From Junction To Ambient 417 /W JAT Junction Temperature 150 jT Storage Temperature -55+150 stgELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =-100A, I =0 -40 V (BR)CBO C ECollector-emitter breakdown voltage V I =-1mA, I =0 -25 V (BR)CEO C BEmitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5