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SSCP005GSB SSCP005GSB High Frequency High Gain PNP Power BJT Features Pin configuration VCE VBE VCESAT Typ. IC Top view -40V -6V -150mV -3A Description This device is produced with advanced high carrier density technology, which is especially used SOT23-6L to minimize saturation voltage drop. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and Bottom view low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and electrical capabilities. Applications Battery powered circuits Low in-line power dissipation Marking circuits Power regulator Ordering Information Device Package Shipping SSCP005GSB SOT23-6L 3000/Reel www.afsemi.com Rev.1.3 SSCP005GSB

 

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 sscp005gsb.pdf Проектирование, MOSFET, Мощность

 sscp005gsb.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 sscp005gsb.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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