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ST13007DHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR IMPROVED SPECIFICATION:- LOWER LEAKAGE CURRENT- TIGHTER GAIN RANGE- DC CURRENT GAIN PRESELECTION- TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY INTEGRATED FREE-WHEELING DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR32RELIABLE OPERATION1 VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125 oCTO-220 LARGE RBSOAAPPLICATIONS UP TO 120W ELECTRONICTRANSFORMERS FOR HALOGEN LAMPS SWITCH MODE POWER SUPPLIESINTERNAL SCHEMATIC DIAGRAMDESCRIPTION The device is manufactured using high voltageMulti Epitaxial Planar technology for highswitching speeds and high voltage capability.It uses a Cellular Emitter structure to enhanceswitching speeds.ABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCEV Collector-Emitter Voltage (VBE = -1.5V) 700 VVCEO