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ST 2SA1213U PNP Silicon Epitaxial Planar Transistor for power amplifier and power switching applications The transistor is subdivided into two groups, O and Y, according to its DC current gain. Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 50 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 2 ABase Current -IB 0.4 A0.5 Total Power Dissipation Ptot W 1 1) Junction Temperature Tj 150Storage Temperature Range Tstg - 55 to + 150 1) When mounted on a 250 mm2 X 0.8 t ceramic substrate. Characteristics at Ta = 25 Parameter Symbol Min. Typ. Max. UnitDC Current Gain at -VCE = 2 V, -IC = 500 mA Current Gain Group O hFE 70 - 140 - Y hFE 120 - 240 - at -VCE = 2 V, -IC = 2 A hFE 20 - - - Collector Base Cutoff Current -ICBO - -