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ST 2SD1664U NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 32 VEmitter Base Voltage VEBO 5 VCollector Current - DC IC 1 A Collector Current - Pulse 1) ICP 2 A 0.5 Ptot W Total Power Dissipation2 2) Junction Temperature TJ 150 Storage Temperature Range TStg - 55 to + 150 1) Single pulse, PW = 100 ms. 2) When mounted on a 40 X 40 X 0.7 mm ceramic board. Characteristics at Ta = 25 Parameter Symbol Min. Typ. Max. UnitDC Current Gain at VCE = 3 V, IC = 100 mA Current Gain Group P hFE 82 - 180 - Q hFE 120 - 270 - R hFE 180 - 390 - Collector Base Breakdown Voltage V(BR)CBO 40 - - Vat IC = 50 A Collector Emitter Breakdown Voltage V(BR)CEO 32 - - Vat IC = 1 mA Emitter Base Breakdown Voltag