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ST 2SD1760U NPN Silicon Epitaxial Planar Transistor Power Transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 45 VEmitter Base Voltage VEBO 5 VCollector Current - DC IC 3 A Collector Current - Pulse 1) ICP 4.5 PC 1 WCollector Power Dissipation Junction Temperature TJ 150 Storage Temperature Range TStg - 55 to + 150 1) Single pulse, PW = 100 ms. Characteristics at Ta = 25 Parameter Symbol Min. Typ. Max. UnitDC Current Gain at VCE = 3 V, IC = 0.5 A Current Gain Group P hFE 82 - 180 - Q hFE 120 - 270 - R hFE 180 - 390 - Collector Cutoff Current ICBO - - 1 Aat VCB = 40 V Emitter Cutoff Current IEBO - - 1 Aat VEB = 4 V Collector Base Breakdown Voltage V(BR)CBO 60 - - Vat IC = 50 A Collector Emitter Breakdown Voltage