Скачать даташит для st2sd1766u:

ST 2SD1766U NPN Silicon Epitaxial Planar Transistor Medium power amplifier Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 32 VEmitter Base Voltage VEBO 5 VCollector Current IC 2 APeak Collector Current (Single pulse, Pw = 20 ms) ICP 2.5 A0.5 Collector Power Dissipation PC W 2 1) Junction Temperature Tj 150 Storage Temperature Range Tstg - 55 to + 150 1) When mounted on a 40 X 40 X 0.7 mm ceramic board. Characteristics at Ta = 25 Parameter Symbol Min. Typ. Max. UnitDC Current Gain at VCE = 3 V, IC = 500 mA Current Gain Group P hFE 82 - 180 - Q hFE 120 - 270 - R hFE 180 - 390 - Collector Base Cutoff Current ICBO - - 1 Aat VCB = 20 V Emitter Base Cutoff Current IEBO - - 1 Aat VEB = 4 V Collector Base Breakdown Voltage V(BR)CBO 40 -