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STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3N-channel 650 V, 0.75 typ., 10 A SuperMESH3 Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packagesDatasheet - production dataFeaturesTABOrder codes VDS RDS(on) max ID PTOT313 STB10N65K3 150 W2D2PAK 1STF10N65K3TO-220FP650 V 1 10 A 35 WSTFI10N65K3TABSTP10N65K3 150 W 100% avalanche tested3 Extremely low on-resistance RDS(on)21 Gate charge minimizedI2PAKFP (TO-281)TO-220 Very low intrinsic capacitances Improved diode reverse recovery Figure 1. Internal schematic diagramcharacteristicsD(2, TAB) Zener-protectedApplications Switching applicationsG(1)DescriptionThese SuperMESH3 Power MOSFETs are the result of improvements applied to STMicroelectronics SuperMESH technology, S(3)combined with a new optimized vertical struc