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ST TIP42C PNP Silicon Epitaxial Planar Transistor for power switching and amplifier applications TO-220 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit100 VCollector Base Voltage -VCBO 100 VCollector Emitter Voltage -VCEO 5 VEmitter Base Voltage -VEBO 6 ACollector Current -IC 10 ACollector Current (Pulse) -ICP 2 ABase Current -IB O2 WPower Dissipation (Ta = 25 C) Ptot OPower Dissipation (Tc = 25 C) Ptot 65 WOJunction Temperature Tj 150 C OStorage Temperature Range Tstg - 65 to + 150 C OCharacteristics at Ta = 25 C Parameter Symbol Min. Max. UnitDC Current Gain at -VCE = 4 V, -IC = 0.3 A hFE 30 - - at -VCE = 4 V, -IC = 3 A hFE 15 75 - Collector Emitter Cutoff Current -ICES - 0.4 mAat -VCE = 100 V Collector Emitter Cutoff Current -ICEO - 0.7 mAat -VCE = 60 V Emitter Base Cu