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SAMWINSW10N65N-channel MOSFETTO-220F TO-220BVDSS : 650VFeaturesID : 10.0A High ruggednessRDS(ON) : 1.1ohm RDS(ON) (Max 1.1)@VGS=10V Gate Charge (Typ 47nC) Improved dv/dt Capability 1 122 2 100% Avalanche Tested3 31. Gate 2. Drain 3. Source1General Description3This power MOSFET is produced with advanced VDMOS technology of SAMWIN.This technology enable power MOSFET to have better characteristics, such as fastswitching time, low on resistance, low gate charge and especially excellent avalanchecharacteristics. It is mainly suitable for half bridge or full bridge resonant topologylike a electronic ballast, and also low power switching mode power appliances.Order CodesItem Sales Type Marking Package Packaging1 SW P 10N65 SW10N65 TO-220 TUBE2 SW F 10N65 SW10N65 TO-220F TUBEAbsolute maximum ratingsValueSymbol P