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SW069R10VS N-channel Enhanced mode TO-220FTS MOSFET Features TO-220FTS BVDSS : 100V High ruggedness Low RDS(ON) (Typ 9.4m)@VGS=4.5V ID : 57A (Typ 7.8m)@VGS=10V Low Gate Charge (Typ 42nC) RDS(ON) : 9.4m@VGS=4.5V Improved dv/dt Capability 7.8m@VGS=10V 100% Avalanche Tested 1 2 Application:Synchronous Rectification, 3 2 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3.Source 1 General Description This power MOSFET is produced with advanced technology of SAMWIN. 3 This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes Item Sales Type Marking Package Packaging 1 SW YS 069R10VS SW069R10VS TO-220FTS TUBE Absolute maximum ratings Symbol Param

 

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 swys069r10vs.pdf Проектирование, MOSFET, Мощность

 swys069r10vs.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 swys069r10vs.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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