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T2N7002BKMOSFETs Silicon N-Channel MOST2N7002BKT2N7002BKT2N7002BKT2N7002BK1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) ESD(HBM) level 2 kV(2) Low drain-source on-resistance: RDS(ON) = 1.05 (typ.) (@VGS = 10 V) RDS(ON) = 1.15 (typ.) (@VGS = 5.0 V) RDS(ON) = 1.2 (typ.) (@VGS = 4.5 V)3. Packaging and Internal Circuit3. Packaging and Internal Circuit3. Packaging and Internal Circuit3. Packaging and Internal Circuit1: Gate2: Source3: DrainSOT23Start of commercial production2015-052015-20172017-11-301Toshiba Electronic Devices & Storage Corporation Rev.2.0T2N7002BK4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )4.