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TGH40N65F2DSField Stop Trench IGBTFeaturesTO-247 650V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating TemperatureG C EApplications UPS, Inverter, Solar, WelderDevice Package Marking RemarkTGH40N65F2DS TO-247 TGH40N65F2DS RoHSAbsolute Maximum Ratings Parameter Symbol Value UnitCollector-Emitter Voltage VCES 650 VGate-Emitter Voltage VGES 20 VTC = 25 80 AContinuous Collector Current ICTC = 100 40 APulsed Collector Current (Note 1) ICM 120 ADiode Continuous Forward Current TC = 100 IF 40 ADiode Pulsed Forward Current (Note 2) IFM 200 ATC = 25 283 WPower Dissipation PDTC = 100 142 WOperating Junction Temperature Tvj -55 ~ 175 Storage Tempera

 

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 tgh40n65f2ds.pdf Проектирование, MOSFET, Мощность

 tgh40n65f2ds.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 tgh40n65f2ds.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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