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isc Silicon NPN Darlington Power Transistor TIP121DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 3AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 3ACE(sat) C= 4.0V(Max)@ I = 5ACComplement to Type TIP126Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 80 VCBOV Collector-Emitter Voltage 80 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 5 ACI Collector Current-Peak 8 ACMI Base Current 120 mABCollector Power Dissipation65T =25CP WCCollector Power Dissipation2T =25aT Junction Tempera