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DIP Type TransistorsNPN Darlington TransistorsTIP122 (KIP122)TO-22010.16 0.20 3.18 0.10 2.54 0.20(0.70) Features(1.00x45 ) Collector Current Capability IC=5A Collector Emitter Voltage VCEO=100V Medium Power Complementary Silicon TransistorsMAX1.470.80 0.101 23#10.35 0.10 +0.100.50 0.05 2.76 0.202.54TYP 2.54TYP[2.54 0.20 ] [2.54 0.20 ]1. Base9.40 0.202. Collector3. Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100 Collector - Emitter Voltage VCEO 100 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 5 A Collector Power Dissipation PC 2 W Thermal Resistance Junction to Ambient RJA 62.5/W Thermal Resistance Junction to Case RJC 1.92 Junction Temperature TJ 150 Storage Temperature Range T