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isc Silicon NPN Power Transistor TIP35CFDESCRIPTIONDC Current Gain-: h = 25(Min)@I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Complement to Type TIP36CFCurrent Gain-Bandwidth Product-: f = 3.0MHz(Min)@I = 1.0AT CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 100 VCBOV Collector-Emitter Voltage 100 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current -Continuous 25 ACI Collector Current-peak 40 ACMI Base Current 5 ABCollector Power DissipationP 125 WC@ T =25CT Junction Temperature 150 jStorage Temperature -65~150 TstgTHERMAL CHARACTERISTICSSYMBOL