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TMP10N65/TMPF10N65 TMP10N65G/TMPF10N65G VDSS = 715 V @Tjmax Features ID = 9.5A Low gate charge RDS(on) = 0.98 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP10N65 / TMPF10N65 TO-220 / TO-220F TMP10N65 / TMPF10N65 RoHS TMP10N65G / TMPF10N65G TO-220 / TO-220F TMP10N65G / TMPF10N65G Halogen Free Absolute Maximum Ratings Parameter Symbol TMP10N65(G) TMPF10N65(G) Unit Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGS 30 V TC = 25 9.5 9.5 * A Continuous Drain Current ID TC = 100 5.83 5.83 * A Pulsed Drain Current (Note 1) IDM 38 38* A Single Pulse Avalanche Energy (Note 2) EAS 293 mJ Repetitive Avalanche Current (Note 1) IAR 9.5 A Repetitive Avalanche Energy (Note 1) EAR 19.8 mJ TC

 

Ключевые слова - ALL TRANSISTORS DATASHEET

 tmp10n65 tmpf10n65.pdf Проектирование, MOSFET, Мощность

 tmp10n65 tmpf10n65.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 tmp10n65 tmpf10n65.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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