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WFF10N65WFF10N65WFF10N65WFF10N65Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 10A,650V,R (Max 0.95)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC)ISO Improved dv/dt capabilityGeneral DescriptionThis Power MOSFET is produced using Winsemi's advanced planarstripe,VDMOS technology. This latest technology has been especiallydesigned to minimize on -state resistance,have a high rugged avalanchecharacteristics. This devices is specially well suited for AC-DC switchingpower supplies,DC-DC power converters,high voltage h-bridge motordrive PWM.Absolute Maximum RatingsSymbol Parameter Value UnitsV Drain Source Voltage 650 VDSSContinuous Drain Current(@Tc=25) 10* AIDConti