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WFW24N50WWFW24N50WWFW24N50WWFW24N50WSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 24A,500V,RDS(on)(Max0.19)@VGS=10V Ultra-low Gate charge(Typical 90nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis N-Channel enhancement mode power field effect transistorsare produced using Winsemi's proprietary, planar stripe ,DMOStechnology. This advanced technology has been especially tailoredto minimize on-state resistance , provide superior switchingperformance, and withstand high energy pulse in the avalanche andcommutation mode. These devices are well suited for highefficiency switch mode power supplies.Absolute Maximum RatingsSymbol Parameter Value UnitsVDSS Drain Source Voltage 500 VContinuous Drain Cur