SEMITRANS MAbsolute Maximum RatingsValuesIGBT ModulesSymbol Conditions 1)UnitsVCES 1700 VVCGR RGE = 20 k 1700 V SKM 200 GAX 173 D 6)IC Tcase = 25/80 C 220 / 150 ASKM 200 GAY 173 D 6)ICM Tcase = 25/80 C; tp = 1 ms 440 / 300 AVGES 20 VPtot per IGBT, Tcase = 25 C 1250 WTj, (Tstg) 40 ... +150 (125) CVisol AC, 1 min. 4000 Vhumidity DIN 40 040 Class F

SKM200GAH123DKL 1200V 200A CHOPPER Module August 2011 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability VCE(sat) With Positive Temperature Coefficient With Fast Free-Wheeling Diodes APPLICATIONS AC and DC motor control AC servo and robot drives Power supplies Welding inverters ABSOLUTE

SKM200GAL123DKLD110 1200V 200A RECTIFIER AND CHOPPER Module August 2011 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability VCE(sat) With Positive Temperature Coefficient With Fast Free-Wheeling Diodes APPLICATIONS AC and DC motor control AC servo and robot drives Power supplies Welding in

SKM200GAL12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 314 ATj = 175 CTc =80C 242 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GAL12T4Tc =80

SKM200GAR12E4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 313 ATj = 175 CTc =80C 241 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 800 VSEMITRANS 3tpsc VGE 15 V Tj =150C 10 sVCES 1200 VTj -40 ... 175 CIGBT4 ModulesInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GAR12E4Tc =

SKM200GAL12E4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 314 ATj = 175 CTc =80C 242 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CIGBT4 ModulesInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GAL12E4Tc =80C 172

SEMITRANS MAbsolute Maximum Ratings ValuesIGBT ModulesSymbol Conditions 1) ... 123 D ... 123 D1 UnitsV 1200 VCESSKM 200 GA 123 D*)V R = 20 k 1200 VCGR GESKM 200 GB 123 DI T = 25/80 C 200 / 180 AC caseSKM 200 GB 123 D1 6)I Tcase = 25/80 C; tp = 1 ms 400 / 360 ACMSKM 200 GAL 123 D 6)VGES 20 VSKM 200 GAR 123 D 6)Ptot per IGBT, Tcase = 25 C 1380 W