IGC189T120T8RL - аналоги и описание IGBT

IGC189T120T8RL IGBT4 Low Power Chip Features Recommended for 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficient Applications easy paralleling low / medium power drives Qualified according to JEDEC for target G applications E Chip Type VCE ICn1 ) Die Size Package IGC189T120T8RL 1200V

IGC189T120T6RL IGBT4 Low Power Chip Features 1200V Trench + Field Stop technology This chip is used for C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications G low / medium power drives E Chip Type VCE ICn Die Size Package IGC189T120T6RL 1200V 200A 13.62 x 13.87 mm2 sawn on foil MECH

IGC18T120T6L IGBT4 Low Power Chip FEATURES 1200V Trench + Field Stop technology This chip is used for C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications G low / medium power drives E Chip Type VCE ICn Die Size Package IGC18T120T6L 1200V 15A 4.16 x 4.34 mm2 sawn on foil MECHANICAL

IGC18T120T8Q High Speed IGBT in Trench and Fieldstop Technology Features Recommended for 1200V Trench + Field stop technology discrete components C low switching losses positive temperature coefficient Applications easy paralleling high frequency drives G UPS E Welding Solar inverters Chip Type VCE ICn Die Size Package IGC18T120T8Q 1200V 15

SIGC186T170R3E IGBT3 Power Chip Features This chip is used for 1700V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC186T170R3E 1700V 150A 13.63 x 13.63 mm2 sawn on foil Mechanical Parameters

SIGC18T60SNC IGBT Chip in NPT-technology C FEATURES This chip is used for 600V NPT technology 100 m chip SGP20N60 short circuit prove positive temperature coefficient Applications G easy paralleling E drives Chip Type VCE ICn Die Size Package Ordering Code Q67041-S2856- SIGC18T60SNC 600V 20A 4.3 x 4.3 mm2 sawn on foil A001 Q67041-S28

SIGC18T60NC IGBT Chip in NPT-technology C FEATURES This chip is used for 600V NPT technology 100 m chip IGBT Modules positive temperature coefficient easy paralleling Applications G E drives Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4139- SIGC18T60NC 600V 20A 4.3 x 4.3 mm2 sawn on foil A001 MECHANICAL PARAMETER mm2 Rast

SIGC18T60UN High Speed IGBT Chip in NPT-technology C FEATURES This chip is used for low Eoff SGP20N60HS 600V NPT technology 100 m chip Applications G short circuit prove E Welding positive temperature coefficient PFC easy paralleling UPS Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4222- SIGC18T60UN 600V

SIGC185T170R2C IGBT Chip in NPT-technology C FEATURES 1700V NPT technology This chip is used for 280 m chip IGBT-Module BSM100GB170DL short circuit prove positive temperature coefficient Applications G easy paralleling E drives Chip Type VCE ICn Die Size Package Ordering Code Q67041-A4697- SIGC185T170R2C 1700V 100A 13.56 x 13.56 mm2 sawn

SIGC186T170R3E IGBT3 Power Chip Features This chip is used for 1700V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC186T170R3E 1700V 150A 13.63 x 13.63 mm2 sawn on foil Mechanical Paramet

IGC18T120T8L IGBT4 Low Power Chip Features Recommended for 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficient Applications easy paralleling low / medium power drives Qualified according to JEDEC for target G applications E Chip Type VCE ICn1 ) Die Size Package IGC18T120T8L 1200V 15A