IGC28T65T8M - аналоги и описание IGBT

IGC28T65T8M IGBT3 Chip Medium Power Features Recommended for 650V Trench & Field Stop technology power modules C high short circuit capability, self limiting short circuit current positive temperature coefficient Applications easy paralleling drives G Qualified according to JEDEC for target E applications Chip Type VCE ICn Die Size Package IGC28T65T8

IGC28T65QE High Speed IGBT3 Chip Features Recommended for 650V Trench & Field Stop technology discrete components and modules high speed switching series third C generation low VCE(sat) Applications low EMI uninterruptible power supplies low turn-off losses welding converters G positive temperature coefficient converters with high switching

SIGC28T65E IGBT3 Chip Features Recommended for 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications short tail current drives positive temperature coefficient easy paralleling G E Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size Package SIGC28T65E 650

SIGC28T60E IGBT3 Chip Features This chip is used for 600V Trench & Field Stop technology power module C low VCE(sat) discrete components low turn-off losses Applications short tail current drives positive temperature coefficient G easy paralleling E Chip Type VCE IC Die Size Package SIGC28T60E 600V 50A 6.57 x 4.2 mm2 sawn on foil

SIGC28T60SE IGBT3 Chip FEATURES This chip is used for 600V Trench & Field Stop technology power module C low VCE(sat) discrete components low turn-off losses short tail current Applications positive temperature coefficient G drives easy paralleling E Chip Type VCE IC Die Size Package SIGC28T60SE 600V 50A 6.57 x 4.2 mm2 sawn