Справочник IGBT. FGA30N120FTD

 

FGA30N120FTD - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: FGA30N120FTD
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 339
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 1200
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 25
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 60
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.6
   Максимальная температура перехода (Tj), ℃: 150
   Время нарастания типовое (tr), nS: 101
   Емкость коллектора типовая (Cc), pf: 150
   Тип корпуса: TO3P

 Аналог (замена) для FGA30N120FTD

 

 

FGA30N120FTD Datasheet (PDF)

 ..1. Size:609K  fairchild semi
fga30n120ftd.pdf

FGA30N120FTD
FGA30N120FTD

May 2009FGA30N120FTDtm1200V, 30A Trench IGBTFeatures General Description Field stop trench technology Using advanced field stop trench technology, Fairchilds 1200Vtrench IGBTs offer superior conduction and switching perfor- High speed switchingmances, and easy parallel operation with exceptional avalanche Low saturation voltage: VCE(sat) = 1.6V @ IC = 30Aruggedne

 8.1. Size:768K  fairchild semi
fga30n60lsd.pdf

FGA30N120FTD
FGA30N120FTD

October 2008FGA30N60LSDtmFeatures General Description Low saturation voltage: VCE(sat) =1.1V @ IC = 30A The FGA30N60LSD is a MOS gated high voltage switchingdevice combining the best features of MOSFETs and bipolar High Input Impedancetransistors.This device has the high input impedance of a Low Conduction LossMOSFET and the low on-state conduction loss of a bipolar

 8.2. Size:375K  onsemi
fga30n60lsd.pdf

FGA30N120FTD
FGA30N120FTD

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:1209K  onsemi
fga3060adf.pdf

FGA30N120FTD
FGA30N120FTD

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.2. Size:375K  onsemi
fga30s120p.pdf

FGA30N120FTD
FGA30N120FTD

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.3. Size:709K  onsemi
fga30t65shd.pdf

FGA30N120FTD
FGA30N120FTD

December 2014FGA30T65SHD650 V, 30 A Field Stop Trench IGBTFeatures General Description Maximum Junction Temperature : TJ =175oC Using novel field stop IGBT technology, Fairchilds new series of field stop 3rd generation IGBTs offer the optimum performance Positive Temperature Co-efficient for Easy Parallel Operatingfor solar inverter, UPS, welder, telecom, ESS and PFC app

Другие IGBT... FGA15N120ANTDTU-F109 , FGA15N120FTD , FGA180N33ATD , FGA20N120FTD , FGA20S120M , FGA25N120ANTD , FGA25N120ANTDTU-F109 , FGA25N120FTD , RJH60D2DPE , FGA30N60LSD , FGA50N100BNT , FGA50N100BNTD , FGA50N100BNTD2 , FGA60N60UFD , FGA90N33ATD , FGAF40N60UF , FGAF40N60UFD .

 

 
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