Справочник IGBT. FGA30N60LSD

 

FGA30N60LSD Даташит. Аналоги. Параметры и характеристики.


   Наименование: FGA30N60LSD
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 480 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 60 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.1 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 7 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 46 nS
   Coesⓘ - Выходная емкость, типовая: 245 pF
   Qgⓘ - Общий заряд затвора, typ: 225 nC
   Тип корпуса: TO3PN
     - подбор IGBT транзистора по параметрам

 

FGA30N60LSD Datasheet (PDF)

 ..1. Size:768K  fairchild semi
fga30n60lsd.pdfpdf_icon

FGA30N60LSD

October 2008FGA30N60LSDtmFeatures General Description Low saturation voltage: VCE(sat) =1.1V @ IC = 30A The FGA30N60LSD is a MOS gated high voltage switchingdevice combining the best features of MOSFETs and bipolar High Input Impedancetransistors.This device has the high input impedance of a Low Conduction LossMOSFET and the low on-state conduction loss of a bipolar

 ..2. Size:375K  onsemi
fga30n60lsd.pdfpdf_icon

FGA30N60LSD

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:609K  fairchild semi
fga30n120ftd.pdfpdf_icon

FGA30N60LSD

May 2009FGA30N120FTDtm1200V, 30A Trench IGBTFeatures General Description Field stop trench technology Using advanced field stop trench technology, Fairchilds 1200Vtrench IGBTs offer superior conduction and switching perfor- High speed switchingmances, and easy parallel operation with exceptional avalanche Low saturation voltage: VCE(sat) = 1.6V @ IC = 30Aruggedne

 9.1. Size:1209K  onsemi
fga3060adf.pdfpdf_icon

FGA30N60LSD

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Другие IGBT... FGA15N120FTD , FGA180N33ATD , FGA20N120FTD , FGA20S120M , FGA25N120ANTD , FGA25N120ANTDTU-F109 , FGA25N120FTD , FGA30N120FTD , MBQ50T65FESC , FGA50N100BNT , FGA50N100BNTD , FGA50N100BNTD2 , FGA60N60UFD , FGA90N33ATD , FGAF40N60UF , FGAF40N60UFD , FGB20N60SF .

History: APT44GA60S | APT43GA90BD30

 

 
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