FGH40N60SF datasheet, аналоги, основные параметры

Наименование: FGH40N60SF  📄📄 

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 290 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃

Tj ⓘ - Максимальная температура перехода: 150 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.3 V @25℃

tr ⓘ - Время нарастания типовое: 42 nS

Coesⓘ - Выходная емкость, типовая: 200 pF

Тип корпуса: TO247

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 Аналог (замена) для FGH40N60SF

- подбор ⓘ IGBT транзистора по параметрам

 

FGH40N60SF даташит

 ..1. Size:677K  fairchild semi
 fgh40n60sf.pdf pdf_icon

FGH40N60SF

March 2009 FGH40N60SF tm 600V, 40A Field Stop IGBT Features General Description High current capability Using Novel Field Stop IGBT Technology, Fairchild s new ses- ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage VCE(sat) =2.3V @ IC = 40A Inverter, UPS, SMPS and PFC applications where low conduc- High input impedance tion and switching

 ..2. Size:507K  onsemi
 fgh40n60sf.pdf pdf_icon

FGH40N60SF

IGBT - Field Stop 600 V, 40 A FGH40N60SF Description Using novel field stop IGBT technology, ON Semiconductor s field stop IGBTs offer the optimum performance for solar inverter, UPS, www.onsemi.com welder and PFC applications where low conduction and switching losses are essential. C Features High Current Capability Low Saturation Voltage VCE(sat) = 2.3 V @ IC = 40 A G

 0.1. Size:806K  fairchild semi
 fgh40n60sfd.pdf pdf_icon

FGH40N60SF

July 2008 FGH40N60SFD tm 600V, 40A Field Stop IGBT Features General Description High current capability Using Novel Field Stop IGBT Technology, Fairchild s new ses- ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage VCE(sat) =2.3V @ IC = 40A Induction Heating, UPS, SMPS and PFC applications where High input impedance low conduction and swi

 0.2. Size:803K  onsemi
 fgh40n60sfdtu fgh40n60sfdtu-f085.pdf pdf_icon

FGH40N60SF

IGBT - Field Stop 600 V, 40 A FGH40N60SFDTU, FGH40N60SFDTU-F085 Description Using Novel Field Stop IGBT Technology, ON Semiconductor s www.onsemi.com new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. C Features High Current Capability Low Saturati

ПОКАЗАТЬ ЕЩЁ

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