FGH40N60SF - аналоги и описание IGBT

 

FGH40N60SF - Аналоги. Основные параметры


   Наименование: FGH40N60SF
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pc ⓘ - Максимальная рассеиваемая мощность: 290 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.3 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
   Tj ⓘ - Максимальная температура перехода: 150 ℃
   tr ⓘ - Время нарастания типовое: 42 nS
   Coesⓘ - Выходная емкость, типовая: 200 pF
   Qg ⓘ - Общий заряд затвора, typ: 120 nC
   Тип корпуса: TO247
 

 Аналог (замена) для FGH40N60SF

   - подбор ⓘ IGBT транзистора по параметрам

 

Технические параметры FGH40N60SF

 ..1. Size:677K  fairchild semi
fgh40n60sf.pdfpdf_icon

FGH40N60SF

March 2009 FGH40N60SF tm 600V, 40A Field Stop IGBT Features General Description High current capability Using Novel Field Stop IGBT Technology, Fairchild s new ses- ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage VCE(sat) =2.3V @ IC = 40A Inverter, UPS, SMPS and PFC applications where low conduc- High input impedance tion and switching

 ..2. Size:507K  onsemi
fgh40n60sf.pdfpdf_icon

FGH40N60SF

IGBT - Field Stop 600 V, 40 A FGH40N60SF Description Using novel field stop IGBT technology, ON Semiconductor s field stop IGBTs offer the optimum performance for solar inverter, UPS, www.onsemi.com welder and PFC applications where low conduction and switching losses are essential. C Features High Current Capability Low Saturation Voltage VCE(sat) = 2.3 V @ IC = 40 A G

 0.1. Size:806K  fairchild semi
fgh40n60sfd.pdfpdf_icon

FGH40N60SF

July 2008 FGH40N60SFD tm 600V, 40A Field Stop IGBT Features General Description High current capability Using Novel Field Stop IGBT Technology, Fairchild s new ses- ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage VCE(sat) =2.3V @ IC = 40A Induction Heating, UPS, SMPS and PFC applications where High input impedance low conduction and swi

 0.2. Size:803K  onsemi
fgh40n60sfdtu fgh40n60sfdtu-f085.pdfpdf_icon

FGH40N60SF

IGBT - Field Stop 600 V, 40 A FGH40N60SFDTU, FGH40N60SFDTU-F085 Description Using Novel Field Stop IGBT Technology, ON Semiconductor s www.onsemi.com new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. C Features High Current Capability Low Saturati

Другие IGBT... FGB20N60SFD , FGD3N60LSD , FGD4536 , FGH20N60SFD , FGH20N60UFD , FGH25N120FTDS , FGH30N120FTD , FGH30N60LSD , IRGB20B60PD1 , FGH40N60SFD , FGH40N60SMD , FGH40N60SMDF , FGH40N60UF , FGH40N60UFD , FGH40N65UFD , FGH50N3 , FGH60N60SF .

 

 
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