Справочник IGBT. FGH40N60SFD

 

FGH40N60SFD - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: FGH40N60SFD
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 290 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.3 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 42 nS
   Coesⓘ - Выходная емкость, типовая: 200 pF
   Qgⓘ - Общий заряд затвора, typ: 120 nC
   Тип корпуса: TO247

 Аналог (замена) для FGH40N60SFD

 

 

FGH40N60SFD Datasheet (PDF)

 ..1. Size:806K  fairchild semi
 fgh40n60sfd.pdf

FGH40N60SFD FGH40N60SFD

July 2008FGH40N60SFDtm600V, 40A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new ses-ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage: VCE(sat) =2.3V @ IC = 40AInduction Heating, UPS, SMPS and PFC applications where High input impedancelow conduction and swi

 ..2. Size:435K  onsemi
 fgh40n60sfd.pdf

FGH40N60SFD FGH40N60SFD

March 2015FGH40N60SFD600 V, 40 A Field Stop IGBTFeatures General Description High Current Capability Using novel field stop IGBT technology, Fairchilds field stopIGBTs offer the optimum performance for solar inverter, UPS, Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 Awelder, microwave oven, telecom, ESS and PFC applications High Input Impedancewhere low cond

 0.1. Size:803K  onsemi
 fgh40n60sfdtu fgh40n60sfdtu-f085.pdf

FGH40N60SFD FGH40N60SFD

IGBT - Field Stop 600 V, 40 AFGH40N60SFDTU,FGH40N60SFDTU-F085DescriptionUsing Novel Field Stop IGBT Technology, ON Semiconductorswww.onsemi.comnew series of Field Stop IGBTs offer the optimum performance forAutomotive Chargers, Inverter, and other applications where lowconduction and switching losses are essential.CFeatures High Current Capability Low Saturati

 4.1. Size:677K  fairchild semi
 fgh40n60sf.pdf

FGH40N60SFD FGH40N60SFD

March 2009FGH40N60SFtm600V, 40A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new ses-ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage: VCE(sat) =2.3V @ IC = 40AInverter, UPS, SMPS and PFC applications where low conduc- High input impedancetion and switching

 4.2. Size:507K  onsemi
 fgh40n60sf.pdf

FGH40N60SFD FGH40N60SFD

IGBT - Field Stop600 V, 40 AFGH40N60SFDescriptionUsing novel field stop IGBT technology, ON Semiconductors fieldstop IGBTs offer the optimum performance for solar inverter, UPS,www.onsemi.comwelder and PFC applications where low conduction and switchinglosses are essential.CFeatures High Current Capability Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 AG

Другие IGBT... FGD3N60LSD , FGD4536 , FGH20N60SFD , FGH20N60UFD , FGH25N120FTDS , FGH30N120FTD , FGH30N60LSD , FGH40N60SF , IRG4PC40W , FGH40N60SMD , FGH40N60SMDF , FGH40N60UF , FGH40N60UFD , FGH40N65UFD , FGH50N3 , FGH60N60SF , FGH60N60SFD .

 

 
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