FGH60N60UFD - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: FGH60N60UFD

Тип управляющего канала: N-Channel

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600

Напряжение насыщения коллектор-эмиттер (Ucesat): 1.9

Максимальный постоянный ток коллектора (Ic): 60

Корпус: TO247

Аналог (замена) для FGH60N60UFD

FGH60N60UFD Datasheet (PDF)

1.1. fgh60n60ufd.pdf Size:756K _fairchild_semi

April 2009 FGH60N60UFD tm 600V, 60A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction • Low saturation voltage: VCE(sat) = 1.9V @ IC = 60A Heating, UPS, SMPS and PFC applications where low conduc • High input impedance tion and swi

2.1. fgh60n60sf.pdf Size:647K _fairchild_semi

July 2008 FGH60N60SF tm 600V, 60A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction • Low saturation voltage: VCE(sat) =2.3V @ IC = 60A Heating, UPS, SMPS and PFC applications where low conduc- • High input impedance tion and switc

2.2. fgh60n60smd.pdf Size:391K _fairchild_semi

March 2011 FGH60N60SMD tm 600V, 60A Field Stop IGBT Features General Description • Maximum Junction Temperature : TJ =175oC Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Solar • Positive Temperaure Co-efficient for easy parallel operating Inverter, UPS, SMPS, IH and PFC applications where low con- • High c

 2.3. fgh60n60sfd.pdf Size:756K _fairchild_semi

April 2009 FGH60N60SFD tm 600V, 60A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction • Low saturation voltage: VCE(sat) =2.3V @ IC = 60A Heating, UPS, SMPS and PFC applications where low conduc- • High input impedance tion and swi

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