FGPF4533 - Аналоги. Основные параметры
Наименование: FGPF4533
Тип транзистора: IGBT
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 28.4 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 330 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 50 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.55 V @25℃
Tj ⓘ - Максимальная температура перехода: 150 ℃
tr ⓘ - Время нарастания типовое: 22 nS
Coesⓘ - Выходная емкость, типовая: 57 pF
Тип корпуса: TO220F
Аналог (замена) для FGPF4533
Технические параметры FGPF4533
fgpf4533.pdf
August 2010 FGPF4533 330V, PDP IGBT Features General Description High current capability Using Novel Trench IGBT Technology, Fairchild s new series of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage VCE (sat) =1.55 V @ IC = 50 A tions where low conduction and switching losses are essential. High input impedance Fast switching
fgpf4536.pdf
August 2010 FGPF4536 360V, PDP IGBT Features General Description High current capability Using Novel Trench IGBT Technology, Fairchild s new series of Low saturation voltage VCE (sat) =1.59 V @ IC = 50 A trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are High input impedance essential. Fast switching RoH
fgpf4565.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fgpf4633.pdf
August 2010 FGPF4633 330V PDP IGBT Features General Description High current capability Using Novel Trench IGBT Technology, Fairchild s new series of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage VCE(sat) = 1.55 V @ IC = 70A tions where low conduction and switching losses are essential. High input impedance Fast switching R
Другие IGBT... FGH60N60UFD , FGH75N60UF , FGH80N60FD , FGH80N60FD2 , FGL35N120FTD , FGL60N100BNTD , FGP20N60UFD , FGP5N60LS , RJP30H2A , FGPF4536 , FGPF4633 , FGPF50N33BT , FGY75N60SMD , SGF23N60UF , SGP10N60RUFD , SGS5N150UF , NGB15N41CL .
Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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