SGP10N60RUFD - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: SGP10N60RUFD

Тип управляющего канала: N-Channel

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600

Напряжение насыщения коллектор-эмиттер (Ucesat): 2.2

Максимальный постоянный ток коллектора (Ic): 10

Корпус: TO220

Аналог (замена) для SGP10N60RUFD

SGP10N60RUFD Datasheet (PDF)

1.1. sgp10n60rufd.pdf Size:615K _fairchild_semi

 IGBT SGP10N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar • Short circuit rated 10us @ TC = 100°C, VGE = 15V Transistors (IGBTs) provide low conduction and switching • High speed switching losses as well as short circuit ruggedness. The RUFD • Low saturation voltage : VCE(sat) = 2.2 V @ IC = 10A series is designed f

1.2. sgp10n60ruf.pdf Size:231K _samsung

N-CHANNEL IGBT SGP10N60RUF FEATURES TO-220 * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 1.95 V @ Ic=10A * High Input Impedance APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters G * Robotics , Servo Controls * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VC

 1.3. sgp10n60rufd.pdf Size:272K _samsung

CO-PAK IGBT SGP10N60RUFD FEATURES TO-220 * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.1 V @ Ic=10A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50nS (Typ) C APPLICATIONS * AC & DC Motor controls G * General Purpose Inverters * Robotics , Servo Controls * Power Supply E * Lamp Ballast ABSOLUTE MAXIMUM RATINGS

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