NGB8202AN datasheet, аналоги, основные параметры

Наименование: NGB8202AN  📄📄 

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 150 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 400 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 15 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 20 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.4 V @25℃

Coesⓘ - Выходная емкость, типовая: 80 pF

Тип корпуса: D2PAK

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 Аналог (замена) для NGB8202AN

- подбор ⓘ IGBT транзистора по параметрам

 

NGB8202AN даташит

 ..1. Size:123K  1
ngb8202n ngb8202an.pdfpdf_icon

NGB8202AN

NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

 6.1. Size:123K  onsemi
ngb8202a.pdfpdf_icon

NGB8202AN

NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

 8.1. Size:130K  1
ngb8207n ngb8207bn.pdfpdf_icon

NGB8202AN

NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

 8.2. Size:123K  1
ngb8206n ngb8206an.pdfpdf_icon

NGB8202AN

NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

Другие IGBT... FGPF4633, FGPF50N33BT, FGY75N60SMD, SGF23N60UF, SGP10N60RUFD, SGS5N150UF, NGB15N41CL, NGB18N40CLB, IKW75N60T, NGB8202N, NGB8204N, NGB8206AN, NGB8206N, NGB8207AN, NGB8207N, NGD15N41CL, NGD18N40CLB