NGD8201N - аналоги и описание IGBT

 

Аналоги NGD8201N. Основные параметры


   Наименование: NGD8201N
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pc ⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 440 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 15 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 20 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.15 V @25℃
   Tj ⓘ - Максимальная температура перехода: 175 ℃
   tr ⓘ - Время нарастания типовое: 6000 nS
   Coesⓘ - Выходная емкость, типовая: 80 pF
   Тип корпуса: DPAK
 

 Аналог (замена) для NGD8201N

   - подбор ⓘ IGBT транзистора по параметрам

 

NGD8201N даташит

 ..1. Size:121K  1
 ngd8201n ngd8201an.pdf pdf_icon

NGD8201N

NGD8201N, NGD8201AN Ignition IGBT 20 A, 400 V, N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 A

 7.1. Size:81K  onsemi
 ngd8201bnt4g.pdf pdf_icon

NGD8201N

NGD8201B Ignition IGBT, 20 A, 400 V N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses www.onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 AMPS, 400 VO

 7.2. Size:123K  onsemi
 ngd8201a.pdf pdf_icon

NGD8201N

NGD8201N, NGD8201AN Ignition IGBT 20 A, 400 V, N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 A

 7.3. Size:81K  onsemi
 ngd8201b.pdf pdf_icon

NGD8201N

NGD8201B Ignition IGBT, 20 A, 400 V N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses www.onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 AMPS, 400 VO

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NGB8204N , NGB8206AN , NGB8206N , NGB8207AN , NGB8207N , NGD15N41CL , NGD18N40CLB , NGD8201A , MBQ50T65FDSC , NGD8205N , NGP15N41CL , FID60-06D , FII24N17AH1 , FII30-06D , FII30-12E , FII40-06D , FII50-12E .

History: SRE80N065FSUD8

 

 

 


 
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