Справочник IGBT. IXGA36N60A3

 

IXGA36N60A3 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IXGA36N60A3

Тип управляющего канала: N-Channel

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600V

Напряжение насыщения коллектор-эмиттер (Ucesat): 1.4V

Максимальный постоянный ток коллектора (Ic): A

Время нарастания: 325

Корпус: TO263

Аналог (замена) для IXGA36N60A3

 

 

IXGA36N60A3 Datasheet (PDF)

1.1. ixga36n60a3.pdf Size:220K _igbt

IXGA36N60A3
IXGA36N60A3

Preliminary Technical Information IXGA36N60A3 VCES = 600V GenX3TM 600V IGBT IXGP36N60A3 IC110 = 36A IXGH36N60A3 ≤ VCE(sat) ≤ ≤ 1.4V ≤ ≤ Ultra Low Vsat PT IGBT for up to 5kHz switching TO-263 (IXGA) G Symbol Test Conditions Maximum Ratings E (TAB) VCES TC = 25°C to 150°C 600 V TO-220 (IXGP) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGE

5.1. ixga30n120b3.pdf Size:209K _igbt

IXGA36N60A3
IXGA36N60A3

VCES = 1200V GenX3TM 1200V IXGA30N120B3 IC110 = 30A IGBTs IXGP30N120B3 ≤ VCE(sat) ≤ ≤£ 3.5V ≤ ≤ IXGH30N120B3 tfi(typ) = 204ns High-Speed Low-Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V TO-220 (IXGP) VGES Continuous ± 20 V VGEM Tra

5.2. ixga30n60c3d4.pdf Size:287K _igbt

IXGA36N60A3
IXGA36N60A3

GenX3TM 600V IGBTs VCES = 600V IXGA30N60C3D4 w/ Diode IC110 = 30A IXGP30N60C3D4 ≤ VCE(sat) ≤ ≤ 3.0V ≤ ≤ tfi(typ) = 47ns High-Speed PT IGBTs for 40-100kHz Switching TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings G E VCES TC = 25°C to 150°C 600 V C (Tab) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V TO-220AB (IXGP) VGES Continuous ± 20 V

 5.3. ixga30n60c3c1.pdf Size:278K _igbt

IXGA36N60A3
IXGA36N60A3

GenX3TM 600V IGBTs VCES = 600V IXGA30N60C3C1 w/ SiC Anti-Parallel IC110 = 30A IXGP30N60C3C1 Diode ≤ ≤ VCE(sat) ≤ 3.0V ≤ ≤ IXGH30N60C3C1 tfi(typ) = 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RG

5.4. ixga30n60c3.pdf Size:269K _igbt

IXGA36N60A3
IXGA36N60A3

GenX3TM 600V VCES = 600V IXGA30N60C3 IGBTs IC110 = 30A IXGP30N60C3 ≤ VCE(sat) ≤ ≤ 3.0V ≤ ≤ IXGH30N60C3 tfi(typ) = 47ns High-Speed PT IGBTs for 40-100kHz Switching TO-263 AA (IXGA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V TO-220AB (IXGP) VGES Continuous ± 20 V

Другие IGBT... IXGA20N120A3 , IXGA20N120B3 , IXGA24N120C3 , IXGA24N60C , IXGA30N120B3 , IXGA30N60C3 , IXGA30N60C3C1 , IXGA30N60C3D4 , FGH60N60SFD , IXGA42N30C3 , IXGA48N60A3 , IXGA48N60B3 , IXGA48N60C3 , IXGA4N100 , IXGA50N60B4 , IXGA50N60C4 , IXGA7N60BD1 .

 

 
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