Справочник IGBT. IXGH20N140C3H1

 

IXGH20N140C3H1 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IXGH20N140C3H1

Тип управляющего канала: N-Channel

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 1400V

Напряжение насыщения коллектор-эмиттер (Ucesat): 5V

Максимальный постоянный ток коллектора (Ic): 42A

Время нарастания: 32

Корпус: TO247

Аналог (замена) для IXGH20N140C3H1

 

 

IXGH20N140C3H1 Datasheet (PDF)

1.1. ixgh20n140c3h1.pdf Size:99K _igbt

IXGH20N140C3H1
IXGH20N140C3H1

Advance Technical Information VCES = 1400V GenX3TM 1400V IGBTs IXGH20N140C3H1 IC100 = 20A w/ Diode IXGT20N140C3H1 ≤ VCE(sat) ≤ ≤ 5.0V ≤ ≤ tfi(typ) = 32ns High-Speed PT IGBTs for 20 - 50 kHz Switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 150°C 1400 V C C (Tab) E VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1400 V VGES Continuous

2.1. ixgh20n100 ixgt20n100.pdf Size:53K _ixys

IXGH20N140C3H1
IXGH20N140C3H1

IXGH 20N100 VCES = 1000 V IGBT IXGT 20N100 IC25 = 40 A VCE(sat) = 3.0 V tfi(typ) = 280 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25C to 150C 1000 V G VCGR TJ = 25C to 150C; RGE = 1 MW 1000 V E VGES Continuous 20 V (TAB) VGEM Transient 30 V TO-247 AD (IXGH) IC25 TC = 25C40 A IC90 TC = 90C20 A ICM TC = 25C, 1 ms 80 A SSOA VGE= 15

2.2. ixgh20n120b ixgt20n120b.pdf Size:568K _ixys

IXGH20N140C3H1
IXGH20N140C3H1

IXGH 20N120B VCES = 1200 V High Voltage IGBT IXGT 20N120B IC25 = 40 A VCE(sat) = 3.4 V Preliminary Data Sheet tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C; RGE = 1 M? 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25C40 A TO-247 AD (IXGH) IC110 TC = 110C20 A ICM TC = 25C, 1

 2.3. ixga20n120a3 ixgh20n120a3 ixgp20n120a3.pdf Size:236K _ixys

IXGH20N140C3H1
IXGH20N140C3H1

VCES = 1200V GenX3TM 1200V IGBTs IXGA20N120A3 IC110 = 20A IXGP20N120A3 ? VCE(sat) ? ? 2.5V ? IXGH20N120A3 ? Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C, RGE = 1M? 1200 V VGES Continuous 20 V VGEM Transient 30 V G C C (Tab) E IC2

2.4. ixgh20n120 ixgt20n120.pdf Size:106K _ixys

IXGH20N140C3H1
IXGH20N140C3H1

VCES = 1200 V IXGH 20N120 IGBT IC25 = 40 A IXGT 20N120 VCE(sat) = 2.5 V tfi(typ) = 380 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C; RGE = 1 M? 1200 V VGES Continuous 20 V VGEM Transient 30 V G D S IC25 TC = 25C40 A IC90 TC = 90C20 A TO-268 (IXGT) ICM TC = 25C, 1 ms 80 A SSOA VGE = 15

 2.5. ixgh20n100.pdf Size:52K _igbt

IXGH20N140C3H1
IXGH20N140C3H1

IXGH 20N100 VCES = 1000 V IGBT IXGT 20N100 IC25 = 40 A VCE(sat) = 3.0 V tfi(typ) = 280 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1000 V G VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V E VGES Continuous ±20 V (TAB) VGEM Transient ±30 V TO-247 AD (IXGH) IC25 TC = 25°C40 A IC90 TC = 90°C20 A ICM TC = 25°C, 1 ms 80 A S

2.6. ixgh20n100a3.pdf Size:220K _igbt

IXGH20N140C3H1
IXGH20N140C3H1

Advance Technical Information VCES = 1000V GenX3TM 1000V IXGA20N100A3 IC90 = 20A IGBTs IXGP20N100A3 ≤ VCE(sat) ≤ ≤ 2.3V ≤ IXGH20N100A3 ≤ Ultra-Low Vsat PT IGBTs for up to 3kHz Switching TO-263 (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXGP) VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1000 V VGES Continuous ±20 V

2.7. ixgh20n120a3.pdf Size:234K _igbt

IXGH20N140C3H1
IXGH20N140C3H1

VCES = 1200V GenX3TM 1200V IGBTs IXGA20N120A3 IC110 = 20A IXGP20N120A3 ≤ VCE(sat) ≤ ≤ 2.5V ≤ IXGH20N120A3 ≤ Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V G

2.8. ixgh20n120.pdf Size:104K _igbt

IXGH20N140C3H1
IXGH20N140C3H1

VCES = 1200 V IXGH 20N120 IGBT IC25 = 40 A IXGT 20N120 VCE(sat) = 2.5 V tfi(typ) = 380 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V G D S IC25 TC = 25°C40 A IC90 TC = 90°C20 A TO-268 (IXGT) ICM TC = 25°C, 1 ms 80 A

2.9. ixgh20n120b.pdf Size:565K _igbt

IXGH20N140C3H1
IXGH20N140C3H1

IXGH 20N120B VCES = 1200 V High Voltage IGBT IXGT 20N120B IC25 = 40 A VCE(sat) = 3.4 V Preliminary Data Sheet tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V G VGES Continuous ±20 V E C (TAB) VGEM Transient ±30 V IC25 TC = 25°C40 A TO-247 AD (IXGH) IC110 TC = 110°C20 A ICM

Другие IGBT... IXGH16N170A , IXGH16N170AH1 , IXGH16N60B2D1 , IXGH16N60C2D1 , IXGH20N100A3 , IXGH20N120 , IXGH20N120A3 , IXGH20N120B , IRGB4062D , IXGH22N170 , IXGH24N120C3 , IXGH24N120C3H1 , IXGH24N170 , IXGH24N170A , IXGH24N170AH1 , IXGH24N60C4 , IXGH24N60C4D1 .

 

 
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Список транзисторов

Обновления

IGBT: STGP7NC60KD | STGF7NC60KD | STGB7NC60KD | FGH75T65UPD | STGW38IH120D | MBQ50T65FDSC | SL40N60FL | PDMB100E6 | SSG60N60N | JNG25N120HS |
 

 

 

 

 
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