IXGK55N120A3H1 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: IXGK55N120A3H1
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 460 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 125 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.85 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5 V
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 42 nS
Coesⓘ - Выходная емкость, типовая: 300 pF
Qgⓘ - Общий заряд затвора, typ: 185 nC
Тип корпуса: TO264
Аналог (замена) для IXGK55N120A3H1
IXGK55N120A3H1 Datasheet (PDF)
ixgk55n120a3h1.pdf
Advance Technical InformationGenX3TM 1200V VCES = 1200VIXGK55N120A3H1IC110 = 55AIGBTs w/ DiodeIXGX55N120A3H1 VCE(sat) 2.3V Ultra-Low-Vsat PT IGBTs forup to 3kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VGCTabVCGR TJ = 25C to 150C, RGE = 1M 1200 V EEVGES Continuous 20 VVGEM Trans
ixgk50n120c3h1.pdf
Preliminary Technical InformationVCES = 1200VGenX3TM 1200V IXGK50N120C3H1IC100 = 50AIGBTs w/ Diode IXGX50N120C3H1VCE(sat) 4.2Vtfi(typ) = 64nsHigh-Speed PT IGBTsfor 20 - 50 kHz SwitchingTO-264 (IXGK)GSymbol Test Conditions Maximum RatingsCEVCES TJ = 25C to 150C 1200 VTabVCGR TJ = 25C to 150C, RGE = 1M 1200 VPLUS247 (IXGX)V
ixgk50n90b2d1.pdf
IXGH 50N90B2D1 VCES = 900 VHiPerFASTTMIXGK 50N90B2D1 IC25 = 75 AIGBT with FastIXGX 50N90B2D1 VCE(sat) = 2.7 VDiodetfi typ = 200 nsB2-Class High Speed IGBTwith Fast DiodePreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VC (TAB)VGES Continuous 20 VGCVGEM Transien
ixgk50n60c2d1 ixgx50n60c2d1.pdf
IXGK50N60C2D1 VCES = 600 VHiPerFASTTMIXGX 50N60C2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.5 VC2-Class High Speed IGBTstfi(typ) = 48 nsPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-264 AA(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCEVGES Continuous 20 VVGEM Transient 30 VPLUS247IC25 TC = 25
ixgk50n60c2d1.pdf
IXGK50N60C2D1 VCES = 600 VHiPerFASTTMIXGX 50N60C2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.5 VC2-Class High Speed IGBTstfi(typ) = 48 nsPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-264 AA(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCEVGES Continuous 20 VVGEM Transient 30 VPLUS247IC25 TC = 25
ixgk50n60b2d1.pdf
Advance Technical DataIXGK50N60B2D1 VCES = 600 VHiPerFASTTMIXGX 50N60B2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.0 VB2-Class High Speed IGBTstfi(typ) = 65 nsSymbol Test Conditions Maximum Ratings TO-264(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCVGES Continuous 20 VEVGEM Transient 30 VPLUS247IC25 TC = 25C
ixgh50n90b2d1 ixgk50n90b2d1 ixgx50n90b2d1.pdf
IXGH 50N90B2D1 VCES = 900 VHiPerFASTTMIXGK 50N90B2D1 IC25 = 75 AIGBT with FastIXGX 50N90B2D1 VCE(sat) = 2.7 VDiodetfi typ = 200 nsB2-Class High Speed IGBTwith Fast DiodePreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VC (TAB)VGES Continuous 20 VGCVGEM Transien
ixgk50n60b2d1 ixgx50n60b2d1.pdf
Advance Technical DataIXGK50N60B2D1 VCES = 600 VHiPerFASTTMIXGX 50N60B2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.0 VB2-Class High Speed IGBTstfi(typ) = 65 nsSymbol Test Conditions Maximum Ratings TO-264(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCVGES Continuous 20 VEVGEM Transient 30 VPLUS247IC25 TC = 25C
ixgk50n60b ixgt50n60b ixgj50n60b.pdf
IXGH 50N60BHiPerFASTTM IGBT VCES = 600 VIXGK 50N60BIC25 = 75 AIXGT 50N60BVCE(sat) = 2.3 VIXGJ 50N60Btfi(typ) = 120 nsTO-247 AD (IXGH)C C (TAB)Symbol Test Conditions Maximum Ratings EVCES TJ = 25C to 150C 600 VTO-268 (D3) ( IXGT)VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGVGEM Transient 30 VC (TAB)EIC25 TC = 25C75 ATO-268 Le
ixgk50n60a2d1.pdf
Advance Technical DataIXGK50N60A2D1 VCES = 600 VIGBT with DiodeIXGX 50N60A2D1IC25 = 75 AVCE(sat) = 1.4 VLow Saturation VoltageSymbol Test Conditions Maximum Ratings TO-264(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCVGES Continuous 20 VEVGEM Transient 30 VPLUS247IC25 TC = 25C (limited by leads) 75 A (IXGX)I
ixgk50n60a2u1 ixgx50n60a2u1.pdf
Advance Technical InformationIXGK 50N60A2U1 VCES = 600 VIGBT with DiodeIXGX 50N60A2U1IC25 = 75 AVCE(sat) = 1.6 VLow Saturation Voltage IGBTwith Low Forward Drop DiodePreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-264(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCEVGES Continuous 20 VVGEM Transient
ixgk50n60au1.pdf
HiPerFASTTM IXGK 50N60AU1 VCES = 600 VIGBT with Diode IC25 = 75 AVCE(sat) = 2.7 VCombi Pack tfi = 275 nsSymbol Test Conditions Maximum Ratings TO-264 AAVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C, limited by leads 75 AG = Gate, C = Collector,IC90 TC = 90C50 AE = Emitter,
ixgk50n60bd1.pdf
IXGK 50N60BD1VCES = 600 VHiPerFASTTMIXGX 50N60BD1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.3 Vtfi = 85 nsSymbol Test Conditions Maximum RatingsTO-264 AA(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 V (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C75 APLUS247IC90 TC = 90C50 A(IXGX)ICM TC = 25C, 1 m
ixgk50n50bu1 ixgk50n60bu1.pdf
VCES IC25 VCE(sat) tfiHiPerFASTTMIXGK 50N50BU1500 V 75 A 2.3 V 100nsIGBT with Diode600 V 75 A 2.5 V 120nsIXGK 50N60BU1Combi PackPreliminary dataSymbol Test Conditions Maximum Ratings TO-264 AA50N50 50N60VCES TJ = 25 C to 150 C 500 600 VVCGR TJ = 25 C to 150 C; RGE = 1 M 500 600 VGVGES Continuous 20 20 VCEVGEM Transient 30 30 VIC25 TC = 25 C75 75 AG = Ga
ixgk50n60b.pdf
IXGH 50N60BHiPerFASTTM IGBT VCES = 600 VIXGK 50N60BIC25 = 75 AIXGT 50N60BVCE(sat) = 2.3 VIXGJ 50N60Btfi(typ) = 120 nsTO-247 AD (IXGH)C C (TAB)Symbol Test Conditions Maximum Ratings EVCES TJ = 25C to 150C 600 VTO-268 (D3) ( IXGT)VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGVGEM Transient 30 VC (TAB)EIC25 TC = 25C75 ATO-268 Le
Другие IGBT... IXGK35N120C , IXGK35N120CD1 , IXGK400N30A3 , IXGK50N120C3H1 , IXGK50N60A2D1 , IXGK50N60B2D1 , IXGK50N60C2D1 , IXGK50N90B2D1 , IRG4PC40W , IXGK60N60B2D1 , IXGK60N60C2D1 , IXGK64N60B3D1 , IXGK72N60A3H1 , IXGK72N60B3H1 , IXGK75N250 , IXGK82N120A3 , IXGK82N120B3 .
Список транзисторов
Обновления
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