IXGT10N170A - аналоги, основные параметры, даташиты
Наименование: IXGT10N170A
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ -
Максимальная рассеиваемая мощность: 140 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1700 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 10 A @25℃
Tj ⓘ - Максимальная температура перехода: 150 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 4.5 V @25℃
tr ⓘ - Время нарастания типовое: 57 nS
Coesⓘ - Выходная емкость,
типовая: 40 pF
Тип корпуса: TO268
Аналог (замена) для IXGT10N170A
- подбор ⓘ IGBT транзистора по параметрам
IXGT10N170A даташит
..1. Size:562K ixys
ixgt10n170a.pdf 
IXGH 10N170A VCES = 1700 V High Voltage IXGT 10N170A IC25 = 10 A IGBT VCE(sat) = 6.0 V tfi(typ) = 35 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C10 A TO-247 AD (IXGH) IC90 TC = 90 C5 A ICM
..2. Size:565K ixys
ixgh10n170a ixgt10n170a.pdf 
IXGH 10N170A VCES = 1700 V High Voltage IXGT 10N170A IC25 = 10 A IGBT VCE(sat) = 6.0 V tfi(typ) = 35 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C10 A TO-247 AD (IXGH) IC90 TC = 90 C5 A ICM
4.1. Size:187K ixys
ixgt10n170.pdf 
VCES = 1700V High Voltage IXGH10N170 IC90 = 10A IGBT IXGT10N170 VCE(sat) 4.0V TO-247 (IXGH) Symbol Test Conditions Maximum Ratings G VCES TC = 25 C to 150 C 1700 V C C (TAB) E VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V TO-268 (IXGT) VGEM Transient 30 V IC25 TC = 25 C 20 A G E IC90 TC = 90 C 10 A C (TAB) ICM TC = 25 C,
9.1. Size:165K ixys
ixgt16n170ah1.pdf 
IXGH 16N170A VCES = 1700 V High Voltage IXGT 16N170A IC25 = 16 A IGBT IXGH 16N170AH1 VCE(sat) = 5.0 V IXGT 16N170AH1 tfi(typ) = 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings H1 VCES TJ = 25 C to 150 C 1700 V TO-268 (IXGT) VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V VGES Continuous 20 V VGEM Transient 30 V G E IC25 TC = 25 C16 A C (TAB) IC90 T
9.2. Size:60K ixys
ixgt15n120bd1.pdf 
Low VCE(sat) IGBT with Diode VDSS IC25 VCE(sat) High Speed IGBT with Diode IXGH/IXGT 15N120BD1 1200 V 30 A 3.2 V IXGH/IXGT 15N120CD1 1200 V 30 A 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247AD (IXGH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V G VGES Continuous 20 V C E TAB VGEM Transient 30 V IC25 TC = 25 C30 A TO-2
9.3. Size:193K ixys
ixgt16n170 ixgh16n170.pdf 
IXGH 16N170 VCES = 1700 V High Voltage IXGT 16N170 IC25 = 32 A IGBT VCE(sat) = 3.5 V TO-268 (D3-Pak) (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1700 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V E C (TAB) VGES Continuous 20 V VGEM Transient 30 V TO-247 (IXGH) IC25 TC = 25 C32 A IC90 TC = 90 C16 A ICM TC = 25 C, 1 ms 80 A C (TAB) SSOA VG
9.4. Size:66K ixys
ixgt15n120b2d1.pdf 
Advance Technical Information VCES =1200 V IXGH15N120B2D1 HiPerFASTTM IGBT IC25 = 30 A IXGT15N120B2D1 VCE(sat) = 3.3 V Optimized for 10-20 KHz hard tfi(typ) = 137 ns switching and up to 100 KHz resonant switching Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25 C to 150 C 1200 V (IXGH) VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V G TAB C
9.5. Size:60K ixys
ixgt15n120cd1.pdf 
Low VCE(sat) IGBT with Diode VDSS IC25 VCE(sat) High Speed IGBT with Diode IXGH/IXGT 15N120BD1 1200 V 30 A 3.2 V IXGH/IXGT 15N120CD1 1200 V 30 A 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247AD (IXGH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V G VGES Continuous 20 V C E TAB VGEM Transient 30 V IC25 TC = 25 C30 A TO-2
9.6. Size:170K ixys
ixgt15n120b.pdf 
IXGH 15N120B VCES = 1200 V HiPerFASTTM IGBT IXGT 15N120B IC25 = 30 A VCE(sat) = 3.2 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C30 A TO-247 AD (IXGH) IC110 TC = 110 C15 A ICM TC = 25 C, 1 ms 60 A
9.7. Size:529K ixys
ixgh15n120b ixgt15n120b.pdf 
IXGH 15N120B VCES = 1200 V HiPerFASTTM IGBT IXGT 15N120B IC25 = 30 A VCE(sat) = 3.2 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C30 A TO-247 AD (IXGH) IC110 TC = 110 C15 A ICM TC = 25 C, 1 ms 60 A
9.8. Size:165K ixys
ixgt16n170a.pdf 
IXGH 16N170A VCES = 1700 V High Voltage IXGT 16N170A IC25 = 16 A IGBT IXGH 16N170AH1 VCE(sat) = 5.0 V IXGT 16N170AH1 tfi(typ) = 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings H1 VCES TJ = 25 C to 150 C 1700 V TO-268 (IXGT) VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V VGES Continuous 20 V VGEM Transient 30 V G E IC25 TC = 25 C16 A C (TAB) IC90 T
9.9. Size:52K ixys
ixgt15n120c.pdf 
IXGH 15N120C VCES = 1200 V IGBT IXGT 15N120C IC25 = 30 A VCE(sat) = 3.8 V Lightspeed Series tfi(typ) = 115 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V G VGES Continuous 20 V E VGEM Transient 30 V (TAB) IC25 TC = 25 C30 A IC90 TC = 90 C15 A TO-247 AD (IXGH) ICM TC =
Другие IGBT... IXGR64N60A3, IXGR6N170A, IXGR72N60A3, IXGR72N60A3H1, IXGR72N60B3D1, IXGR72N60B3H1, IXGR72N60C3D1, IXGT10N170, GT30J127, IXGT15N120B2D1, IXGT16N170, IXGT16N170A, IXGT16N170AH1, IXGT20N120, IXGT20N120B, IXGT20N140C3H1, IXGT22N170
