IXGT35N120B - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: IXGT35N120B
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 300 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 70 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 3.3(max) V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5 V
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 27 nS
Coesⓘ - Выходная емкость, типовая: 260 pF
Qgⓘ - Общий заряд затвора, typ: 170 nC
Тип корпуса: TO268
Аналог (замена) для IXGT35N120B
IXGT35N120B Datasheet (PDF)
ixgh35n120b ixgt35n120b.pdf
Advance Technical InformationIXGH 35N120B VCES = 1200 VHiPerFASTTM IGBTIXGT 35N120B IC2 = 70 AVCE(sat) = 3.3 Vtfi(typ) = 160 nsSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VGEVGES Continuous 20 VC (TAB)VGEM Transient 30 VIC25 TC = 25C70 ATO-247 AD (IXGH)IC90 TC = 90C35 AI
ixgt35n120b.pdf
Advance Technical InformationIXGH 35N120B VCES = 1200 VHiPerFASTTM IGBTIXGT 35N120B IC2 = 70 AVCE(sat) = 3.3 Vtfi(typ) = 160 nsSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VGEVGES Continuous 20 VC (TAB)VGEM Transient 30 VIC25 TC = 25C70 ATO-247 AD (IXGH)IC90 TC = 90C35 AI
ixgt35n120c.pdf
Advance Technical InformationIXGH 35N120C VCES = 1200 VIGBTIXGT 35N120C IC25 = 70 AVCE(sat) = 4.0 VLightspeed Seriestfi(typ) = 115 nsSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VGEVGES Continuous 20 V(TAB)VGEM Transient 30 VIC25 TC = 25C70 ATO-247 AD (IXGH)IC90 TC = 90C3
ixgh32n170a ixgt32n170a.pdf
IXGH 32N170AVCES = 1700 VHigh VoltageIXGT 32N170AIC25 = 32 AIGBTVCE(sat) = 5.0 Vtfi(typ) = 50 nsSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C32 ATO-247 AD (IXGH)IC90 TC = 90C21 AICM TC = 25C, 1 ms 110 A
ixgt32n120a3.pdf
GenX3TM 1200V VCES = 1200VIXGH32N120A3IGBTs IC110 = 32AIXGT32N120A3VCE(sat) 2.35VUltra-Low Vsat PT IGBTs forup to 3 kHz SwitchingTO-268 (IXGT)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 1200 VEVCGR TJ = 25C to 150C, RGE = 1M 1200 VC (Tab)VGES Continuous 20 VTO-247 (IXGH)VGEM Transient 30 VIC25 TC = 25C 75
ixgt30n60c3d1.pdf
GenX3TM 600V IGBTsVCES = 600VIXGH30N60C3D1w/ DiodeIC110 = 30AIXGT30N60C3D1VCE(sat) 3.0Vtfi(typ) = 47nsHigh-Speed PT IGBTs for40-100 kHz SwitchingTO-268 (IXGT)Symbol Test Conditions Maximum RatingsGVCES TC = 25C to 150C 600 VEVCGR TJ = 25C to 150C, RGE = 1M 600 VC (Tab)VGES Continuous 20 VVGEM Transient 30 VTO-247 (IXG
ixgh30n60c2 ixgt30n60c2.pdf
VCES = 600 VIXGH 30N60C2HiPerFASTTM IGBTIC25 = 70 AIXGT 30N60C2VCE(sat) = 2.7 VC2-Class High Speed IGBTstfi typ = 32 nsTO-268 (IXGT)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGE C (TAB)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C (limited by leads) 70 ATO-247 (IXGH)IC110 TC =
ixgt30n60c2.pdf
VCES = 600 VIXGH 30N60C2HiPerFASTTM IGBTIC25 = 70 AIXGT 30N60C2VCE(sat) = 2.7 VC2-Class High Speed IGBTstfi typ = 32 nsTO-268 (IXGT)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGE C (TAB)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C (limited by leads) 70 ATO-247 (IXGH)IC110 TC =
ixgt31n60d1.pdf
Ultra-Low VCE(sat) IXGH 31N60D1 VCES = 600 VIGBT with Diode IXGT 31N60D1 IC25 = 60 AVCE(sat) = 1.7 VPreliminary dataSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 V GEC (TAB)VGES Continuous 20 VVGEM Transient 30 VTO-247 ADIC25 TC = 25C60 A(IXGH)IC90 TC = 90C31 AICM TC = 25C, 1
ixgt32n170a.pdf
IXGH 32N170AVCES = 1700 VHigh VoltageIXGT 32N170AIC25 = 32 AIGBTVCE(sat) = 5.0 Vtfi(typ) = 50 nsSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C32 ATO-247 AD (IXGH)IC90 TC = 90C21 AICM TC = 25C, 1 ms 110 A
ixgh32n90b2d1 ixgt32n90b2d1.pdf
Advance Technical InformationVCES = 900 VIXGH 32N90B2D1HiPerFASTTM IGBTIC25 = 64 AIXGT 32N90B2D1with Fast DiodeVCE(sat) = 2.7 Vtfi typ = 150 nsB2-ClassHigh Speed IGBTs withUltrafast DiodeSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 MW 900 VC (TAB)VGES Continuous 20 VGCVGEM Transient
ixgh30n60c2d1 ixgt30n60c2d1.pdf
VCES = 600 VHiPerFASTTM IGBT IXGH 30N60C2D1IC25 = 70 AIXGT 30N60C2D1with DiodeVCE(sat) = 2.7 VC2-Class High Speed IGBTstfi typ = 32 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C (limited by leads) 70 AIC11
ixgt32n60c.pdf
IXGH 32N60C VCES = 600 VHiPerFASTTM IGBTIXGT 32N60C IC25 = 60 ALightspeedTM SeriesVCE(sat)typ = 2.1 Vtfi typ = 55 nsTO-268Symbol Test Conditions Maximum Ratings (IXGT)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VGE C (TAB)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C60 ATO-247 AD (IXGH)IC110 TC = 110C32 AICM TC =
ixgt32n60bd1.pdf
IXGH 32N60BHiPerFASTTM IGBT VCES = 600 VIXGT 32N60BIC25 = 60 AIXGH 32N60BD1VCE(sat) = 2.3 VIXGT 32N60BD1tfi(typ) = 85 ns(D1)Symbol Test Conditions Maximum RatingsTO-268(IXGT)GVCES TJ = 25C to 150C 600 VECVCGR TJ = 25C to 150C; RGE = 1 M 600 V(TAB)VGES Continuous 20 VTO-247 ADVGEM Transient 30 V(IXGH)IC25 TC = 25C60 AIC90 TC = 90C3
ixgt30n120b3d1.pdf
VCES = 1200VGenX3TM 1200V IGBT IXGH30N120B3D1IC110 = 30A IXGT30N120B3D1VCE(sat) 3.5Vtfi(typ) = 204nsHigh speed Low Vsat PTIGBTs 3-20 kHz switchingSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VVGEM Transient 30 VGIC110 TC = 110C30
ixgt32n60cd1.pdf
IXGH 32N60CD1 VCES = 600 VHiPerFASTTM IGBTIXGT 32N60CD1 IC25 = 60 Awith DiodeVCE(SAT)typ = 2.1 Vtfi(typ) = 55 nsLight Speed SeriesTO-247 AD (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGVGES Continuous 20 VC (TAB)CVGEM Transient 30 V EIC25 TC = 25C60 AIC90 TC = 90C32 ATO-268 (D
ixgt30n60c2d1.pdf
VCES = 600 VHiPerFASTTM IGBT IXGH 30N60C2D1IC25 = 70 AIXGT 30N60C2D1with DiodeVCE(sat) = 2.7 VC2-Class High Speed IGBTstfi typ = 32 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C (limited by leads) 70 AIC11
ixgt30n60b2.pdf
Advance Technical DataVCES = 600 VIXGH 30N60B2HiPerFASTTM IGBTIC25 = 70 AIXGT 30N60B2VCE(sat)
ixgt31n60.pdf
Ultra-Low VCE(sat) IGBT IXGH 31N60 VCES = 600 VIXGT 31N60 IC25 = 60 AVCE(sat) = 1.7 VSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 MW 600 V C(TAB)EVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C60 ATO-268IC90 TC = 90C31 AICM TC = 25C, 1 ms 80 AGSSOA VGE= 15 V, TVJ = 125C, RG = 1
ixgt32n100a3.pdf
Advance Technical Information IXGH32N100A3 VCES = 1000V GenX3TM 1000V IGBT IXGT32N100A3 IC25 = 75A VCE(sat) 2.2V Ultra-low Vsat PT IGBTs for up to 4 kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25C to 150C 1000 V G C (TAB) VCGR TJ = 25C to 150C, RGE = 1M 1000 V C E VGES Continuous 20 V TO-268 (
ixgh32n90b2 ixgt32n90b2.pdf
Advance Technical InformationIXGH 32N90B2 VCES = 900 VHiPerFASTTM IGBTIXGT 32N90B2 IC25 = 64 AB2-Class High Speed IGBTsVCE(sat) = 2.7 Vtfi typ = 150 nsSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VC (TAB)VGES Continuous 20 VGVGEM Transient 30 V CEIC25 TC = 25C (limited by leads)
ixgh30n60b2 ixgt30n60b2.pdf
Advance Technical DataVCES = 600 VIXGH 30N60B2HiPerFASTTM IGBTIC25 = 70 AIXGT 30N60B2VCE(sat)
ixgt39n60b.pdf
HiPerFASTTM IGBT IXGH39N60B VCES = 600 VIXGH39N60BD1 IC25 = 76 AIXGT39N60B VCE(sat) = 1.7 VIXGT39N60BD1 tfi = 200 nsPreliminary data(D1)TO-268Symbol Test Conditions Maximum Ratings (IXGT)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGE C (TAB)VGES Continuous 20 VVGEM Transient 30 VTO-247 AD (IXGH)IC25 TC = 25C76 AIC90 TC =
ixgt32n90b2d1.pdf
Advance Technical InformationVCES = 900 VIXGH 32N90B2D1HiPerFASTTM IGBTIC25 = 64 AIXGT 32N90B2D1with Fast DiodeVCE(sat) = 2.7 Vtfi typ = 150 nsB2-ClassHigh Speed IGBTs withUltrafast DiodeSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 MW 900 VC (TAB)VGES Continuous 20 VGCVGEM Transient
ixgt30n60b2d1.pdf
Advance Technical DataVCES = 600 VHiPerFASTTM IGBT IXGH 30N60B2D1IC25 = 70 AIXGT 30N60B2D1VCE(sat)
ixgt39n60bd1.pdf
HiPerFASTTM IGBT IXGH39N60B VCES = 600 VIXGH39N60BD1 IC25 = 76 AIXGT39N60B VCE(sat) = 1.7 VIXGT39N60BD1 tfi = 200 nsPreliminary data(D1)TO-268Symbol Test Conditions Maximum Ratings (IXGT)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGE C (TAB)VGES Continuous 20 VVGEM Transient 30 VTO-247 AD (IXGH)IC25 TC = 25C76 AIC90 TC =
ixgt32n90b2.pdf
Advance Technical InformationIXGH 32N90B2 VCES = 900 VHiPerFASTTM IGBTIXGT 32N90B2 IC25 = 64 AB2-Class High Speed IGBTsVCE(sat) = 2.7 Vtfi typ = 150 nsSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VC (TAB)VGES Continuous 20 VGVGEM Transient 30 V CEIC25 TC = 25C (limited by leads)
ixgt32n170.pdf
High Voltage IXGH 32N170 VCES = 1700 VIXGT 32N170 IC25 = 75 AIGBTVCE(sat) = 3.3 Vtfi(typ) = 250 nsPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C75 ATO-247 AD (IXGH)IC90 TC = 90C32 AICM TC
ixgh32n170 ixgt32n170.pdf
High Voltage IXGH 32N170 VCES = 1700 VIXGT 32N170 IC25 = 75 AIGBTVCE(sat) = 3.3 Vtfi(typ) = 250 nsPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C75 ATO-247 AD (IXGH)IC90 TC = 90C32 AICM TC
ixgt30n60b.pdf
IXGH 32N60BHiPerFASTTM IGBT VCES = 600 VIXGT 32N60BIC25 = 60 AIXGH 32N60BD1VCE(sat) = 2.3 VIXGT 32N60BD1tfi(typ) = 85 ns(D1)Symbol Test Conditions Maximum RatingsTO-268(IXGT)GVCES TJ = 25C to 150C 600 VECVCGR TJ = 25C to 150C; RGE = 1 M 600 V(TAB)VGES Continuous 20 VTO-247 ADVGEM Transient 30 V(IXGH)IC25 TC = 25C60 AIC90 TC = 90C3
ixgt32n60b.pdf
IXGH 32N60BHiPerFASTTM IGBT VCES = 600 VIXGT 32N60BIC25 = 60 AIXGH 32N60BD1VCE(sat) = 2.3 VIXGT 32N60BD1tfi(typ) = 85 ns(D1)Symbol Test Conditions Maximum RatingsTO-268(IXGT)GVCES TJ = 25C to 150C 600 VECVCGR TJ = 25C to 150C; RGE = 1 M 600 V(TAB)VGES Continuous 20 VTO-247 ADVGEM Transient 30 V(IXGH)IC25 TC = 25C60 AIC90 TC = 90C3
ixgh30n60b2d1 ixgt30n60b2d1.pdf
Advance Technical DataVCES = 600 VHiPerFASTTM IGBT IXGH 30N60B2D1IC25 = 70 AIXGT 30N60B2D1VCE(sat)
Другие IGBT... IXGT30N60C3D1 , IXGT32N100A3 , IXGT32N120A3 , IXGT32N170 , IXGT32N170A , IXGT32N60C , IXGT32N90B2 , IXGT32N90B2D1 , IHW40T60 , IXGT35N120C , IXGT39N60B , IXGT39N60BD1 , IXGT40N120A2 , IXGT40N120B2D1 , IXGT40N60B , IXGT40N60B2 , IXGT40N60B2D1 .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2