Справочник IGBT. IXGT45N120

 

IXGT45N120 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IXGT45N120
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 75 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.5(max) V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 28 nS
   Coesⓘ - Выходная емкость, типовая: 255 pF
   Qgⓘ - Общий заряд затвора, typ: 170 nC
   Тип корпуса: TO268

 Аналог (замена) для IXGT45N120

 

 

IXGT45N120 Datasheet (PDF)

 ..1. Size:62K  ixys
 ixgt45n120.pdf

IXGT45N120 IXGT45N120

IXGH 45N120 VCES = 1200 VIXGT 45N120 IC25 = 75 AIGBTVCE(sat) = 2.5 VHigh Voltage, Low VCE(sat)tfi(typ) = 390 nsPreliminary data sheetSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C, limited by leads 75 ATO-247 AD (I

 9.1. Size:162K  ixys
 ixgh40n60c2d1 ixgt40n60c2d1 ixgg40n60c2d1.pdf

IXGT45N120 IXGT45N120

HiPerFASTTM IGBTIXGH40N60C2D1 VCES = 600VIXGT40N60C2D1 IC25 = 75Awith Diode IXGJ40N60C2D1 VCE(SAT) 2.7V tfi(typ) = 32nsC2-Class High Speed IGBTsTO-247(IXGH)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 V C (TAB)CEVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VTO-268 (D3) ( IXGT)VGEM Transient 30 V

 9.2. Size:291K  ixys
 ixgh40n60b ixgt40n60b.pdf

IXGT45N120 IXGT45N120

IXGH 40N60B VCES = 600 VHiPerFASTTM IGBTIXGT 40N60B IC25 = 75 AVCE(sat) = 2.1 Vtfi = 180 nsPreliminary data sheetSymbol Test Conditions Maximum Ratings TO-247 AD(IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C75 AIC110 TC = 110C40 ATO-268 (D3)ICM TC = 25C

 9.3. Size:168K  ixys
 ixgt40n120a2.pdf

IXGT45N120 IXGT45N120

IXGH 40N120A2IXGT 40N120A2IXGH 40N120A2 VCES = 1200 VHigh Voltage IGBTIXGT 40N120A2 IC25 = 75 ALow VCE(sat)VCE(sat) 2.0 VPreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247 (IXFH)VCES TJ = 25C to 150C 1200 VVCES TJ = 25C to 150C 1200 VVGES Continuous 20 VVGEM Transient 30 VGCIC25 TC = 25C, IGBT chip capabilit

 9.4. Size:575K  ixys
 ixgt40n60b2.pdf

IXGT45N120 IXGT45N120

Advance Technical DataVCES = 600 VIXGH 40N60B2HiPerFASTTM IGBTIC25 = 75 AIXGT 40N60B2VCE(sat)

 9.5. Size:168K  ixys
 ixgt40n60c2d1.pdf

IXGT45N120 IXGT45N120

HiPerFASTTM IGBTsVCES = 600VIXGT40N60C2D1IC110 = 40Aw/ DiodeIXGJ40N60C2D1 VCE(SAT) 2.7V IXGH40N60C2D1tfi(typ) = 32nsC2-Class High Speed IGBTsTO-268 (IXGT)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-268 (IXGJ)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 V

 9.6. Size:513K  ixys
 ixgt40n60b2d1.pdf

IXGT45N120 IXGT45N120

VCES = 600 VHiPerFASTTM IGBT IXGH 40N60B2D1IC25 = 75 AIXGT 40N60B2D1VCE(sat)

 9.7. Size:156K  ixys
 ixgt4n250c.pdf

IXGT45N120 IXGT45N120

Advance Technical InformationHigh VoltageVCES = 2500VIXGT4N250CIGBTsIXGH4N250CIC110 = 4AVCE(sat) 6.0VTO-268 (IXGT)GSymbol Test Conditions Maximum Ratings EC (Tab)VCES TC = 25C to 150C 2500 VVCGR TJ = 25C to 150C, RGE = 1M 2500 VTO-247 (IXGH)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C 13 AIC110 TC = 110C 4 A

 9.8. Size:122K  ixys
 ixgt40n60c.pdf

IXGT45N120 IXGT45N120

VCES = 600 VIXGH 40N60CHiPerFASTTM IGBTIC25 = 75 AIXGT 40N60CLightspeedTM SeriesVCE(sat) = 2.5 Vtfi typ = 75 nsPreliminary DataTO-268Symbol Test Conditions Maximum Ratings (IXGT)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGE C (TAB)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C75 ATO-247 AD (IXGH)IC110 TC = 11

 9.9. Size:606K  ixys
 ixgh40n60b2d1 ixgt40n60b2d1.pdf

IXGT45N120 IXGT45N120

VCES = 600 VHiPerFASTTM IGBT IXGH 40N60B2D1IC25 = 75 AIXGT 40N60B2D1VCE(sat)

 9.10. Size:149K  ixys
 ixgh40n60c2 ixgt40n60c2.pdf

IXGT45N120 IXGT45N120

VCES = 600 VIXGH 40N60C2HiPerFASTTM IGBTIC25 = 75 AIXGT 40N60C2C2-Class High Speed IGBTsVCE(sat) = 2.7 Vtfi typ = 32 nsTO-268 (IXGT)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 M 600 V E C (TAB)VGES Continuous 20 VVGEM Transient 30 VTO-247 (IXGH)IC25 TC = 25C (limited by leads) 75 AIC110 TC = 1

 9.11. Size:145K  ixys
 ixgt40n60c2.pdf

IXGT45N120 IXGT45N120

VCES = 600 VIXGH 40N60C2HiPerFASTTM IGBTIC25 = 75 AIXGT 40N60C2C2-Class High Speed IGBTsVCE(sat) = 2.7 Vtfi typ = 32 nsTO-268 (IXGT)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 M 600 V E C (TAB)VGES Continuous 20 VVGEM Transient 30 VTO-247 (IXGH)IC25 TC = 25C (limited by leads) 75 AIC110 TC = 1

 9.12. Size:578K  ixys
 ixgh40n60b2 ixgt40n60b2.pdf

IXGT45N120 IXGT45N120

Advance Technical DataVCES = 600 VIXGH 40N60B2HiPerFASTTM IGBTIC25 = 75 AIXGT 40N60B2VCE(sat)

 9.13. Size:213K  ixys
 ixgt40n120b2d1.pdf

IXGT45N120 IXGT45N120

High Voltage IGBTs VCES = 1200VIXGH40N120B2D1w/DiodeIXGT40N120B2D1IC110 = 40AVCE(sat) 3.5Vtfi(typ) = 140nsTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VGC (TAB)CVGEM Transient 30 VEIC25 TC = 25C (Limited by Lead) 75 AIC110 TC =

Другие IGBT... IXGT40N120A2 , IXGT40N120B2D1 , IXGT40N60B , IXGT40N60B2 , IXGT40N60B2D1 , IXGT40N60C , IXGT40N60C2 , IXGT40N60C2D1 , TGAN20N135FD , IXGT4N250C , IXGT50N60B2 , IXGT50N60C2 , IXGT50N90B2 , IXGT60N60B2 , IXGT60N60C2 , IXGT60N60C3D1 , IXGT64N60A3 .

 

 
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