IXXH100N60C3 - аналоги, параметры транзистора

IXXH100N60C3 даташит

..1. Size:171K ixys
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Advance Technical Information VCES = 600V XPTTM 600V IXXH100N60C3 IC110 = 100A GenX3TM VCE(sat) 2.20V tfi(typ) = 75ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V G VCGR TJ = 25 C to 175 C, RGE = 1M 600 V C Tab E VGES Continuous 20 V VGEM Transient 3

4.1. Size:171K ixys
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Preliminary Technical Information XPTTM 600V VCES = 600V IXXH100N60B3 GenX3TM IC110 = 100A VCE(sat) 1.80V tfi(typ) = 150ns Extreme Light Punch Through IGBT for 10-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCGR TJ = 25 C to 175 C, RGE = 1M 600 V G C Tab VGES Continuous 20 V E VGEM Transien

9.1. Size:167K ixys
ixxh110n65c4.pdf pdf_icon

Advance Technical Information XPTTM 650V IGBT VCES = 650V IXXH110N65C4 GenX4TM IC110 = 110A VCE(sat) 2.35V Extreme Light Punch Through tfi(typ) = 30ns IGBT for 20-60 kHz Switching Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V VGES Continuous 20 V VGEM Transient 30 V G C

9.2. Size:231K ixys
ixxh150n60c3.pdf pdf_icon

Advance Technical Information VCES = 600V 600V XPTTM IGBT IXXH150N60C3 IC110 = 150A GenX3TM VCE(sat) 2.5V tfi(typ) = 75ns Extreme Light Punch through IGBT for 20-60kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCGR TJ = 25 C to 175 C, RGE = 1M 600 V VGES Co

Другие IGBT... IXST35N120B , SIW100N65G2P2D , IXST45N120B , IXSX35N120BD1 , IXSX40N60BD1 , IXSX80N60B , IXXA50N60B3 , IXXH100N60B3 , YGW40N65F1 , IXXH30N60B3D1 , IXXH30N60C3D1 , IXXH50N60B3 , IXXH50N60B3D1 , IXXH50N60C3 , IXXH50N60C3D1 , IXXH75N60B3 , IXXH75N60B3D1 .