Справочник IGBT. IGC54T65T8RM

 

IGC54T65T8RM - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IGC54T65T8RM
   Тип транзистора: IGBT
   Тип управляющего канала: N
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 100 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.82 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.4 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   Тип корпуса: CHIP

 Аналог (замена) для IGC54T65T8RM

 

 

IGC54T65T8RM Datasheet (PDF)

 ..1. Size:76K  infineon
 igc54t65t8rm.pdf

IGC54T65T8RM IGC54T65T8RM

IGC54T65T8RMIGBT3 Chip Medium PowerFeatures: Recommended for: 650V Trench & Field Stop technology power modulesC high short circuit capability, self limitingshort circuit current positive temperature coefficient Applications: easy paralleling drivesG Qualified according to JEDEC for targetEapplicationsChip Type VCE ICn Die Size PackageIGC54T65T

 6.1. Size:88K  infineon
 igc54t65r3qe.pdf

IGC54T65T8RM IGC54T65T8RM

IGC54T65R3QEHigh Speed IGBT3 ChipFeatures: Recommended for: 650V Trench & Field Stop technology discrete components andmodules high speed switching series thirdCgeneration low VCE(sat) Applications: low EMI uninterruptible power supplies low turn-off losses welding convertersG positive temperature coefficient converters with high switchi

 6.2. Size:122K  infineon
 sigc54t65r3e.pdf

IGC54T65T8RM IGC54T65T8RM

SIGC54T65R3E IGBT3 Chip Features: Recommended for: 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications: short tail current drives positive temperature coefficient easy parallelingGE Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size PackageSIGC54T65R3E

 7.1. Size:120K  infineon
 sigc54t60r3e.pdf

IGC54T65T8RM IGC54T65T8RM

SIGC54T60R3E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology power moduleC low VCE(sat) low turn-off losses Applications: short tail current drives positive temperature coefficient G easy parallelingE Chip Type VCE IC Die Size PackageSIGC54T60R3E 600V 100A 5.97 x 8.97 mm2 sawn on foil Mechanical Parame

 7.2. Size:120K  infineon
 sigc54t60r3.pdf

IGC54T65T8RM IGC54T65T8RM

SIGC54T60R3E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology power moduleC low VCE(sat) low turn-off losses Applications: short tail current drives positive temperature coefficient G easy parallelingE Chip Type VCE IC Die Size PackageSIGC54T60R3E 600V 100A 5.97 x 8.97 mm2 sawn on foil Mechanical Parame

Другие IGBT... MIXA10WB1200TED , IGC18T120T8L , MIXA10WB1200TMH , MIXA10WB1200TML , IGC18T120T6L , MIXA150W1200TEH , IGC13T120T6L , MIXA151W1200EH , IRG7IC28U , MIXA20W1200MC , IGC54T65R3QE , MIXA20W1200TMH , IGC50T120T8RQ , MIXA20W1200TML , IGC50T120T8RL , MIXA20WB1200TED , IGC50T120T6RL .

 

 
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